@techreport{RG91,
  author =       { R. Rivest and L. Glasser },
  title =        { A Fast Multiport Memory Based on Single-Port Memory Cells },
  date =         { 1991-07 },                  
  OPTyear =      { 1991 },
  OPTmonth =     { July },
  institution =  { MIT Lab for Computer Science },
  number =       { MIT/LCS/TM-455 },
  abstract =     {
      We present a new design for dual-port memories that uses single-port
      memory cells but guarantees fast deterministic read/write access.  The
      basic unit of storage is the word, rather than the bit, and addressing
      conflicts result in bit errors that are removed by correction circuitry.
      The addressing scheme uses Galois field arithmetic to guarantee that the
      maximum number of bit errors in any word accessed is one.  These errors
      can be corrected every time with a simple correction scheme.  The scheme
      can be generalized to an arbitrary number of ports.
                 },                  
}