The susceptibility to irradiation-induced loss of long-range translational and orientational order during amorphization of crystalline solids, a process which usually amounts to topological disordering, can be understood on the basis of available structural freedom which depends on the redundancies present in structural connectivity. A surprisingly good correlation has been established between the critical accumulated energy deposited per atom - or displacements per atom (dpa) - required for amorphization during ion irradiation and the calculated structural freedom for the structure type irradiated over a wide range of non-metal structural types. These include AO, AO₂, A₂O₃, ABO₃, ABO₄, A₂B₂O₇and A₂BO₄ compact structure types, in which weakest links can often be identified, as well as less-compact network structures. The present contribution specifically compares the order of susceptibility to amorphization - in these more complex oxide structures and in the simpler network structures Si₃N₄, SiC, Be₂SiO₄, AlPO₄, Si, SiO₂, P₂O₅ and graphite - on the basis of structural connectivity and discusses the anomalous susceptibility of SIC.